One of the sad facts of life for nanometer silicon has been the rise of leakage current as device geometries shrink. At 65nm, CMOS leakage currents roughly equal operating currents, making it virtually impossible to reduce overall operating current by more than half. I’ve long thought this was the result of low-Vt transistors that can never fully turn off, a consequence of the drive to recover speed that’s lost when supply voltages are cut to reduce operating power. Turns out there’s another culprit: nickel contamination that occurs when nickel atoms drift away from the nickel-silicide interface layer used to improve the connectivity of metal inter-layer contact plugs. The nickel atoms drift during the annealing process, which is used to drive the deposited nickel atoms into the transistors’ source and drain contact pads. The first of two annealing cycles drives the metallic nickel atoms into the silicon source and drain pads creating Ni2Si silicide. A second, higher-temperature annealing process converts the Ni2Si into NiSi, which has lower resistance and thus provides good electrical connectivity between the contact pad and the metal interconnect plug.
It turns out that the current “soak” annealing (which lasts for tens of seconds) processes allow the nickel atoms to drift far afield. Like beach sand in your bathing suit, the nickel gets into places you’d rather not have it. The drifting nickel atoms seem to have an affinity for silicon lattice discontinuities, which can be found at the outside ends of the transistor where source and drain diffusions meet the isolation trenches and in long, narrow voids that run from the source and drain regions towards and into the FET channel. Both of these hiding places cause leakage because the metallic nickel conducts electricity where there should be insulator or semiconductor material. Nickel at the ends of the transistor causes substrate leakage and nickel atoms in the channel naturally cause channel leakage.
Applied Materials and European semiconductor research powerhouse IMEC have jointly developed a laser-annealing process with one-millisecond duration instead of taking tens of seconds. As a result, the diffusing nickel doesn’t have time to drift into these unwanted places during the second annealing step that generates NiSi. Applied Materials described a similar laser-spike annealing process back in 2004 (see article here), but reportedly achieved only a 3-4% leakage reduction back then. This latest development appears to be a refinement of that earlier technique. The two companies will be presenting their findings at this week’s IEDM conference in Baltimore, Maryland.
IMEC and Applied Materials will indeed have pulled a rabbit out of the hat if this laser-spike annealing process plus the application of appropriate transistor-design rules result in cutting leakage currents by 90% for nanometer CMOS. Leakage-driven power loss has become a significant problem for advanced IC design and had appeared to be insurmountable, even with the addition of high-K and metal-gate processing. Now, it appears there’s a real solution with the best of all possible implications for system and logic designers: they don’t need to learn anything new. They can leave this fix to the design tools and to the process engineers and once again skirt the system-level and architectural issues of low-power design.
